Horizontal CIGS thin film photovoltaics glass coating system

This machine is widely applied in the solar cells. Transparent conductive film can be used as antireflection layer and transparent electrode, improve the solar conversion efficiency. Use CIGS thin film to alternate the traditional thin film, to reduce cost,non-toxic and environmentally friendly, film is stable, while vertical lines can eliminate the drawbacks of not mass production, can greatly increase production. 

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The HCVAC is an inline coating system based on our proprietary large-area coating technology. As the coater us very wide and can therefore process many substrates at the same time, it i9s especially suited for high productivity applications at very low costs. It is suited for large-area glass substrates.

It is the perfect choice for customer looking for highly productive and flexible production equipment combined with proven technology and design. Due to its large width, the productivity of the tool is exceptioally high while the process utilization is brought to a maximum. Thus, the HCVAC offers best cost of ownership by providing applicable economy of scale.

The process chamber can be equipped with five or more different prcess stations in a sputter down arrangement. It enables simultaneous processing of different material compositions from metallic and ceramic targets.


Material: metal, ceramics

Utilization: planar > 30%

                  rotable > 80%  


Material: glass

Dimension(L×W), max.: 2000 × 2400mm

Thickness: 1.8mm(1.4mm) to 4mm for glass

Deposition System

Deposition type: DC, pulsed DC, AC

Magnetron type: planar, single or dual rotable

Sputter arrangement: sputter dowm

Substrate temperature range: RT/200℃/400℃

Substrate potential: floating

Number of independent process gases: up to 4(Ar, O2 , N2 ,X)


Type of transport: inline

Orientation of substrate during deposition: horizontal, LEL, SEL

Conveyor speed, max.: ≦3.5 m/min(process); ≦30 m/min(handling)

Throughput, max.: < 800 m2/h

Cleaning of magnetron chambers

Cleaning principle: mechanical exchange of shields

Cleaning cycle: 7 to 28 days, depending on configuration




Phase: 3 phases

Voltage: 230V, 400V, 480V

Frequency: 50 Hz to 60 Hz

Power consumption: depending on configuration

Cooling system: separate cooling circuit with heat exchanger

Cooling supply: primary cooling water supply by customer

Venting medium: compressed dry air or N2

Process gas: central supply by customer or local by gas cabinet


control &software

Computer hardware: PLC, siemens S7

System dimensions

Total system size(L×W×H): min. 20 m ×16.5 m ×3.5 m

Total system wenght: depending on configuration

CIGS thin-film photovoltaics: ZnO:Al based contact layers;CuGa and in precursor layer;SiOxNy barrier layers and Mo metal back contact layers CdTe thin-film photovoltaics: Metal back contact layers based on Al, Cr, Mo, NiV Organic photovoltaics: Deposition by sputtering and VTE
CIGS conductive film CIGS conductive film 1 CIGS conductive film 2