LED epitaxial wafers have been one of the high-end technology components in the electronics industry, and the substrate coating also gained great attention. LED epitaxial wafers technical process as follows:

Substrate - structural design - buffer layer growth - N-type GaN layer growing - a multi-quantum well light emitting layer - P-type GaN layer growing - annealing - detection (fluorescent light, X-rays) - epitaxial wafers

Epitaxial wafers - design, processing reticle - lithography - Ion Etching - N-type electrode (coating, annealing, etching) - P-type electrode (coating, annealing, etching) - scribe - chip sorting, grading

On the current market, most of the LED epitaxial wafer manufacturers use CVD (chemical vapor deposition) production of aluminum nitride film as their main techniques, produced by the CVD film uniformity ALN unstable, susceptible to the formation of many surface black spots, CVD technology plated aluminum nitride requires nearly 1000 ℃ working temperature, because the aluminum nitride film is below 500 ℃ can not be synthesized, generally at a temperature buffer layer reached 600 ~ 870 ℃. The layer can reach the high temperature of 1000 ℃ in 5 minutes, and it should last 60 minutes to produce LED epitaxial wafer substrate ALN film,  and it has great limitations generated by CVD ALN film substrate material.

With the global economy developing rapidly, more and more people pursue a simple,sustain and environmental lifestyle, in some words, it needs more innovative techniques for their products. This technology- LED Epitaxial Wafers Coating Film, can meet those requirement, and be recognized and widely used by our customers.