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As the industry moves toward chiplet, 3D stacking, and high-speed interconnects, material and equipment suppliers are no longer just “tool vendors”. They have become core enablers of next-generation packaging.
With the shift toward glass substrates (G1.0–G5.0), large wafers (6–8”), and high-aspect-ratio micro-vias (20–300 μm diameter, 100–1500 μm depth), TGV/TCV metallization is now one of the most critical processes defining packaging performance.This is precisely the area where Huicheng Vacuum has built its strongest technological advantage.
TGV (Through-Glass Via) and TCV (Through-Ceramic Via) technologies are rapidly replacing organic substrates in following applications:
Advantages:
However, the true challenge is creating reliable, continuous, low-resistance metal pathways through these materials.
For high-aspect-ratio vias (10:1 to 15:1), any failure in metallization means the entire package is scrap. This remains one of the industry’s biggest bottlenecks—and exactly where Huicheng Vacuum’s technology enters as a decisive enabler.
TGV Geometries
Depending on how the vias are formed—typically through laser drilling or wet/dry etching—TGVs generally fall into four categories:
Compared with TSV, TGV usually features larger diameters and full-depth vias, which increase plating time and overall process cost.
Because glass has an extremely smooth surface, common metals such as copper tend to peel or curl, leading to delamination between the substrate and the metallization layer.
Via geometry plays a critical role in determining electrical performance, long-term reliability, fabrication cost, and overall process complexity.
Leveraging their inherent brittleness, excellent insulation, and superior high-frequency characteristics, glass substrates are increasingly adopted in 2.5D/3D IC packaging, RF components, MEMS sensors, and advanced display modules.
TGV Via-Fill Technologies
Achieving void-free and seam-free filling requires different approaches depending on the via structure.
Bottom-Up Filling (for blind and V-shaped vias)
Butterfly Filling (BFT, for straight through-vias)
TGV/TCV metallization imposes far more demanding requirements than conventional PVD systems, including:
TGV/TCV metallization imposes far more demanding requirements than conventional PVD systems, including:
Core Capabilities
TGV PVD Seed Layer AR 15:1
Item | Specification |
Wafer Size | 6–8 inches |
Glass Substrates | G1.0–G5.0 (100 × 100 mm to 1100 × 1300 mm) |
Via Dimensions | Diameter 20–300 μm, Depth 100–1500 μm |
Aspect Ratio | Up to 15:1, full-coverage metallization |
Film Uniformity | ≤ ±3% |
Warp/Flatness Control | Low warpage, high planarity |
Production Throughput | Multi-cassette automated loading/unloading with carrier-locked transfer |
Process Data | Automated logging with full quality traceability |
This means HCVAC is equipped not only for lab-scale demonstrations, but truly for volume production.
As Chiplet architectures become the mainstream for AI servers, consumer electronics, and automotive systems, the demand for high-bandwidth, low-latency vertical interconnects is reaching unprecedented levels.
TGV/TCV metallization is emerging as a foundational enabling technology for:
Companies capable of high-aspect-ratio via metallization will hold the core advantage in the next era of advanced packaging.
In China, only a handful of companies can support large-format glass panels, 15:1 aspect-ratio vias, ≤±3% uniformity, and stable high-volume manufacturing—and HCVAC is among the key leaders in this field.
Over the past decade, competition in China’s thin-film equipment market centered on PVD stability and target utilization.
Today, the benchmark has shifted: whether equipment can fully support the technology development of Chiplet, 3D integration, and optoelectronic packaging.
HCVAC’s TGV/TCV metallization platforms bridge the full gap from fundamental research to high-volume manufacturing:
This is more than an equipment upgrade—it represents a step-change in the capability of the entire semiconductor packaging ecosystem.
With the rapid growth of high-end s...
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