CVD

diamond

growing system

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CVD diamond growing system

CVD cultivated diamond is a kind of polycrystalline diamond synthesized by diamond crystals with a diameter of 10 to 30 nanometers. Its chemical composition is carbon. It is planted by chemical meteorological deposition (CVD) technology using advanced equipment to simulate the diamond growth environment in nature.

The system uses microwave plasma CVD technology to heat natural gas and hydrogen and form carbon plasma in the pressure chamber. The plasma is continuously deposited on the bottom carbon layer at the bottom of the pressure chamber and gradually accumulates and hardens to form diamond sheets.

The reaction rate of precursor is increased and the reaction temperature is reduced by plasma. It is suitable for preparing high-quality hard films and crystals with large area, good homogeneity, high purity and good crystal morphology.

HCVAC plasma technology solves the limitations of traditional plasma technology, can excite highly stable plasma clusters within the range of 10mbar to room pressure, reduce the changes in plasma state caused by fluctuations in air flow, air pressure, gas composition, voltage and other factors, ensure the continuity of single crystal growth, and provide a strong guarantee for the synthesis of large single crystal diamonds.

Application
Batch growth of high-quality single crystal diamond and polycrystalline diamond (large gem grade single crystal diamond, highly oriented diamond crystal, nanocrystalline diamond, carbon nanotube/diamond-like carbon (DLC)).
It is also suitable for thin film deposition and crystal synthesis of other hard materials such as Al2O3 and c-BN.
CVD preparation of various films, surface treatment and modification of materials, growth of low-temperature oxides, etc.
It is suitable for industrial production of optical, electronic, tool grade diamond film or single crystal, graphene, etc., material surface treatment, low-temperature oxide growth, etc.

Product Advantage.

CVD diamond growing system includes the following key capabilities:
  • Pure

    Clean, pollution-free and evenly distributed

  • High purity

    Above VVS level

  • Stable & easy

    Single crystal growth is not interrupted by interference

  • Modularization

    Meet different needs from experiment to industry

  • Moderate temperature

    The carrier gas shall be kept at proper temperature

  • Automation

    Fully automatic process control module

Mode HCCVD-D
Power Supply AC380±10% V Three phase five wire system 50Hz,Rated input<18KVA
Microwave output power 0.5~6kW Continuously adjustable
Power stability 1%(@steady-state)
Ripple ≤1%
Microwave frequency 2450MHz±50MHz
Temperature measurement method Infrared 300~1400℃
Ultimate vacuum 6×10-6torr
Working pressure in chamber 7torr~250torr
Sample table Φ60mm
Axial adjustment range of sample table 0-60mm
Working atmosphere Five way (customizable)
Microwave leakage value <5mW/cm2
Work environment Temperature15-40℃, relative humidity≤60%, No corrosive gas
Cooling water  >37L/Min
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Please contact us

E-mail: info@hcvac.com

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