Technology and Services

  • Evaporation
  • Etching and PIAD
  • Sputtering

Evaporation technology:

Choose from a full range of standard and custom steam sources, and use quartz and optical monitors to source control the rate and thickness of the layer.

Combined with advanced process control technology to control the stress, temperature distribution or optical characteristics of the coating itself, the evaporation source can realize the accurate deposition of metal, dielectric and TCO, which is suitable for various applications, including power devices, wireless, led, MEMS and photonics.

Heat source

Ships, filament sources and bulk barrel sources for thick layers of hundreds of nanometers.

Electron beam evaporation

Body with longitudinal beam scanning

A system with a spray gun and a full digital beam sweeper for thick layers of single, multi pocket and large capacity crucibles.

The customized electron gun source with crucible turret system is used for special applications and extends the product time between source maintenance.

Seepage pool technology

The "dispersion source" with high stability can be used for customized applications of materials with high temperature and low vapor pressure, or for applications requiring special low doping rate in codeposition.

Plasma ion assisted evaporation (piad)

Ion source technology can provide lower process temperature, shorter process time and enhanced film performance for applications in Photonics and optoelectronics.

Etching and PIAD

Etching and piad Technology

Each platform in the converged portfolio can be integrated using the etch and / or piad functions.

From metal etching to high-throughput treatment of organic substrates in fanout wafer level or panel level packaging (fowlp and foplp), to deposition of thick optical laminations with excellent adhesion, the composite can provide customized etching and piad sources and processes. This is just a few examples of aggregation capabilities.

Metal etching

In situ etching and deep processing can be carried out on bak platform. In the vertical sputtering platform, the load locking chamber can be equipped with degassing, heating and RF or ion beam etching functions to pre clean and improve film adhesion. Our advanced back metallization process on thin wafers includes pre etching that can control stress and temperature to form high quality ohmic contacts without bending or warping the wafers

Advanced packaging

Special ICP Arctic etch technology combines cold ICP reactor technology with degassing and sputtering technology to achieve stable contact resistance (RC) value on highly degassed organic substrate in typical applications such as fowlp. Huicheng makes full use of the knowledge in the wafer level application program and brings functions for foplp and advanced PCB processing.

Piad for dielectric stabilization

The combination of source technology on bak evaporators, sputterers and vertical sputterers with advanced process control technologies (such as optical monitoring, plasma radiation monitoring and in-situ re optimization) enables the deposition of stable and complex optical layers by evaporation or sputtering.


HCVAC's proprietary cathode technology and platform are designed for high rate and long target life in mass production at the lowest cost of ownership. We provide vertical and horizontal sputter production solutions according to the substrate format, process and output of the whole core market and the integrated requirements of customers' factories

Horizontal sputtering architecture: This is only a small part of a series of core process functions provided by HCVAC and a platform with horizontal sputtering function

Deposition of high performance AlN (and alscn) layers for MEMS, wireless communications and LEDs-

Deposition of high-throughput optical stack for wafer level optics (WLO)-

Deposition of metal and lamination (UBM / RDL), power supply, wireless communication, wafer level EMI shielding or PCB inoculation in advanced packaging

The sputtering function of HCVAC supports substrate formats up to 200mm, 300mm, 380mm and 650mm respectively.

High speed DC, DC pulse, DC / RF source with optional bias

"Multi" sputtering technology with up to 4 sources for co deposition of alloys and compounds

Proprietary source technology including "Penta Plus" and up to 6 sputtering cathodes for excellent step coverage

High ionization sputtering (his) technology for TSV technology and customized hard coating technology in optical applications

Integrated advanced process control technology, including plasma emission monitoring (PEM) and optical monitoring technology for process control

Cassette to cassette processing

Vertical sputtering architecture

The rectangular cathode technology can be used on the vertical sputtering platform. It can be used in MEMS, optoelectronics and photonics applications to efficiently mass produce TCO, metal, dielectric and aligned magnetic films. The maximum substrate size is 380 x 560mm.

Simple exchange of substrate sizes can quickly change production requirements


PECVD is the abbreviation of plasma assisted chemical vapor deposition. Sometimes PECVD is also written. E stands for enhancement. In the PVD process, the coating material is obtained by evaporation in the solid form; in the PACVD process, the coating material is obtained by evaporation in the gas form, and the gas, such as hmdso (hexamethyldimethylsilyl ether), is about 200 under the action of plasma When cracking occurs at º C, non reactive gases, such as argon, can make ions deposit on the workpiece surface and form a very thin coating. Diamond like carbon (DLC) coating is a good example of PACVD technology, which is usually used in tribology and automobile industry.

Plasma assisted chemical vapor deposition (PACVD) is used to deposit DLC coating. Through plasma excitation and ionization, chemical reactions in the process can be activated. With this process, we can use pulse glow or high frequency discharge to deposit at a low temperature of about 200 ° C. the DLC coating produced by PACVD has the characteristics of low friction coefficient and expandable surface hardness.

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