HCCL series

Transparent conductive film

coating system

Vacuum application solution supplier
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Solar film conductive film production line

This machine is widely used in solar cells, transparent conductive film as antireflection layer and transparent electrode, can improve the conversion efficiency of solar energy, reduce costs, non-toxic and environmental protection, film stability, and can eliminate the drawbacks of vertical production line can not be large-scale production, can greatly improve the production capacity.

The machine adopts large area sputtering technology, and the width of the coater is large. It can process many substrates at the same time. It is especially suitable for very low cost and high productivity applications. The system is also suitable for other small size and very thin substrates.

Due to the modular design, the coating line can be equipped with a rotating magnetron for sputtering deposition of high-performance transparent conductive oxide films or a variety of other materials, such as metals and metal oxides. The substrate can be pretreated in vacuum or before the substrate enters the vacuum state, such as cleaning or etching the substrate.

Product Advantage.

HCCL series Large area transparent conductive film production line includes the following key capabilities:
  • Mature technology

    Mature magnetron sputtering technology

  • Separate interval

    Design of vacuum chamber with separate space

  • Flexible

    Flexible configuration of carrier transmission system

  • Temperature controllable

    Reliable heating control system

  • High efficiency

    Low cost and high productivity

  • Customization

    Flexible dynamic design

Item Performance
Applicable substrate M2、M4 silicon wafer
Substrate temperature <150℃
Properties of ITO Films Transmittance>90%
Resistivity<4 × 10-4 Ω · cm
Film uniformity ≤±5%
Rhythm 40~60s
Dynamic rate ≥90%
Capacity 5000~8000 pcs/hour
Item Performance
Applicable substrate M2、M4 silicon wafer
Substrate temperature <150℃
Film uniformity ≤±5%
Rhythm 40~60s
Dynamic rate ≥90%
Capacity 5000~8000 pcs/hour
Item Performance
Applicable substrate M2、M4 silicon wafer
Substrate temperature <150℃
Film uniformity ≤±5%
Rhythm 40~60s
Dynamic rate ≥90%
Capacity 5000~8000 pcs/hour
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